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Silicon is an emerging anode material due to its high lithium storage capacity. While some commercial batteries now include silicon particles, porous three-dimensional (3D) scaffolded silicon electrodes may enable higher silicon loading by accommodating the silicon volume expansion during lithiation without significant electrode swelling. However, the electrochemomechanical response of silicon films on metal scaffolds remains poorly understood due to the complex scaffold morphology. We explore the role of scaffold curvature in the cycling behavior of silicon films and show that different curvatures exhibit distinctive failure modes. Negative curvature leads to crack opening from tensile and compressive stresses. Positive curvature induces tensile stress-driven buckling. Zero curvature exhibits fragmentation. The electrode morphology and chemistry for these systems are evaluated via scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy (STEM-EDS). COMSOL Multiphysics simulations support that the electrochemo-mechanics of silicon are curvature-dependent. These findings point toward design strategies for 3D architected silicon anodes with improved cycling integrity. 

Abstract This work reports a three‐dimensional (3D) radio frequency L−C filter network enabled by a CMOS‐compatible two‐dimensional (2D) fabrication approach, which combines inductive (L) and capacitive (C) self‐rolled‐up membrane (S‐RuM) components monolithically into a single L−C network structure, thereby greatly reducing the on‐chip area footprint. The individual L−C elements are fabricated in‐plane using standard semiconductor processing techniques, and subsequently triggered by the built‐in stress to self‐assemble and roll into cylindrical air‐core architectures. By designing the planar structure geometry and constituent layer properties to achieve a specific number of turns with a desired inner diameter when the device is rolled up, the electrical characteristics can be engineered. The network layouts of the L and C components are also reconfigurable by selecting appropriate input, output, and ground contact routing topographies. The devices demonstrated here operate over the range of ≈1−10 GHz. Their area and volume footprints are ≈0.09 mm²and ≈0.01 mm³, respectively, which are ≈10× smaller than most of the comparable conventional filter designs. These S‐RuM‐enabled 3D microtubular L−C filter networks represent significant advancement for miniaturization and integration of passive electronic components for applications in mobile connectivity and other frequency range.